| 摘要 |
PURPOSE:To shorten a lifting-off treating time and to prevent the production of a burr by dipping a substrate formed with a metal or insulating layer on a positive type photoresist film in a low temperature liquefied gas to generate cracks and dipping it in a resist solvent. CONSTITUTION:When a positive type photoresist film 2 is formed on an Si substrate 1 and lead alloys 31, 32 are deposited on a pattern surrounded by the film 2 and the film 22, a lead alloy 33 is adhered to the side wall. Then, the substrate 1 is dipped in liquefied gas being less than approx. 100 deg.K such as liquefied nitrogen or the like and the temperature of the substrate is equalized substantially to the liquefied gas temperature for longer than several seconds. At this time, cracks are produced at the films 2 and 33. Subsequently, it is dipped in a resist solvent, a high frequency is applied to it, and the films 2 and 32 are removed from the substrate 1. According to this structure, a metal layer of high accuracy and quality can be readily formed on the semiconductor substrate. |
