| 摘要 |
PURPOSE:To improve the adherence of a semiconductor device by forming source and drain electrodes on a GaAs output electrode connection layer except the region formed with a gate electrode when the gate electrode, the source and drain electrodes are formed in a high electron mobility transistor. CONSTITUTION:A non-doped GaAs layer 2 becoming a channel layer for forming a normally ON type or normally OFF type high electron mobility transistor of crystalline parameters, an N type AlGaAS layer 3, and a GaAS layer 4 becoming an N type output electrode connection layer of approx. 1-2X10<18>/cm<3> are laminated and grown by a molecular beam epitaxially growing method on a semi-insulating GaAs substrate 1. At this time, there are the case that an electron storage layer 5 is produced by the crystalline parameter and the case that the layer 5 is not produced, but since the part of the layer 4 is removed, the parameter is decided by considering it. Then, the mask 7 is used, the layer 4 is dry etched, a gate electrode forming region 6 is removed, and the gate electrode 8, and the source and drain electrodes 9 are respectively coated on the region 6 and the remaining layer 4. |
