| 摘要 |
PURPOSE:To obtain an etched well type light emitting diode of high intensity for producing a light from a hole formed at a substrate by selectively injecting a current on a double hetero epitaxial layer by forming a window layer having an absorption end at the side of a short wavelength side from a light emitting wavelength adjacent to the clad layer of a hetero structure. CONSTITUTION:An N-type AlxGa1-xAs layer 210 becoming a window layer is epitaxially grown in liquid phase on an N-type GaAs substrate 100. At this time, the layer 210 has 0.4 of aluminum composition (x) at the side of the substrate 100 and 0.15 at the end so as not to absorb the light of 850nm, providing an absorption end at the side of short wavelength from the light emitting wavelength. Then, to sufficiently enclose the injection carrier on the layer, an N-type AlxGa1-xAs clad layer 220 of 0.3 of Al composition ratio(x), P-type AlyGa1-yAs active layer 120, a P-type AlxGa1-xAs clad layer 130, and N-type AlyGa1-yAs layer 140 are laminated and grown, are etched from the side of the substrate 100, and a light pickup surface 260 of the layer 210 is exposed. |
