| 摘要 |
PURPOSE:To obtain a semiconductor device having preferable electrodes with a chemical dry etching CDE by employing any of Zr, Hf and Cr films as a mask instead of a resist mask. CONSTITUTION:Zr, Hf and Cr films can not be etched in a range of room temperature to 200 deg.C, can be readily formed in a film, and can also be etched readily by a solution method. For example, in case that a window is opened at an SiO2 film on a semiconductor substrate, the first metal film contacted with the substrate is provided, the third metal such as Au, Al, are provided as electrodes through the second metal made of a transient metal for preventing the reaction between the metals, the elctrodes are formed by etching the first and second metal films made of any of Mo, Ta, W, Nb, V, and Ti with a mask of any of Zr, Hf and Cr in a plasma atmosphere with CF4+O2, and the mask is removed with the etchant. According to this method, the electrode having no remaining resist on the substrate can be obtained. This can also be applied to the etching of Si, O2, Si3N4 films in addition to the transient metal film. |
