| 摘要 |
PURPOSE:To obtain a sensitive body having high dark resistivity by changing the ratio of acetylene to Si in a gas during the formation of a film so that an amorphous silicon carbide layer formed is composed of at least four layered regions contg. C under specified conditions. CONSTITUTION:An a-SiC forming gas is decomposed by glow discharge to form a positively chargeable photoconductive a-SiC layer 5c on a substrate 1. The gas contains C2H2 and Si in 0.01:1-3:1 ratio. During the formation of the a-SiC layer 5c, the ratio of C2H2 to Si is changed so that the layer is composed of first, second, third and fourth layered regions 6, 7, 8, 9 formed in order from the substrate 1 side toward the surface of the resulting sensitive body. The amount of C in the third region 8 is made smaller than that in the fourth region 9 and larger than that in the second region 7. When the second region 7 is formed, 10<-6>-1mol% gas contg. a group IIia element is added to the a-SiC forming gas. When the first region 6 is formed, the gas contg. the group IIIa element is added by a larger amount than the amount in case of the second region 7. The regions 6-9 are practically integrated into the photoconductive a-SiC layer 5c. |
