| 摘要 |
PURPOSE:To prevent the production of a discontinuous part of the second layer at the stepped part by forming a layer connected to the side surface of the first layer on a substrate and inclined from the side surface to the surface of the substrate to compensate for the stepped art and then laminating the second layer. CONSTITUTION:An SiO2 23, and a conductive polysilicon 24 are laminated on an Si substrate 21, and a side surface 26 is vertical to the surface 22 of the substrate. A CVD SiO2 28 is then covered in a thickness selected in a range of 50- 150% of the height of the surface 27 of the layer 25 on the surface 22 of the substrate. Subsequently, when it is etched by reactive sputtering with CF4+H2, the surace 29 of a layer 30 is extended continuously from the upper surface of the layer 25, is ended to the main surface 22 of the substrate, thereby compensating the stepped part. Then, thermally oxidized films 31, 32 are connected to the layer 30, and a conductive layer 33 such as Mo is continuously extended. According to this structure, even if the side surface 26 of the layer 25 is vertical to the substrate, a discontinuous part is not formed on the second layer 33 on the upper surface due to the presence of the stepped part compensating layer 30. |
