| 摘要 |
PURPOSE:To manufacture a uniform electrode in a short time, by forming a wiring layer other than a base electrode in the surface layer part of a semiconductor substrate, and flowing a plating current in said layer. CONSTITUTION:A bump forming wiring layer 11 is formed in the entire area of the main surface of the substrate 5. The region of the layer 11 other than a bump electrode forming region 12 is coated by a protecting film 13 comprising a resist. The substrate 5 is immersed in an electrolyte plating tub, and the bump electrode comprising silver is formed on the layer 11, with the layer 11 as a negative plating electrode. Thereafter, the unnecessary part of the bump electrde forming wiring layer 11 other than the protecting film 13 and the base electrode 8 is etched away. An electrde 9 is formed on the lower surface of the substrate 5. Thus a diode 2 is formed. In this method, the value of the plating current can be made large regardless of the maximum rating of the diode element, and the plate growth can be increased. |
