发明名称 GASEOUS-PHASE REACTOR
摘要 PURPOSE:To supply a source uniformly to wafers, and to treat a large number of the wafers by forming a large number of introducing ports for a reaction gas, mounting a polygonal cylindrical body of quartz into a quartz tube and setting up a mechanism turning the cylindrical body. CONSTITUTION:A polygonal cylinder 7 of quartz is installed into space surrounded by a quartz tube 1. Here, the positions of openings in the tubular longitudinal direction of each introducing port 2, 3, 4, 5 in the quartz tube 1 differ. A metal chloride is introduced from the introducing ports 2, 3, 4, 5, a gas for reduction is introduced from the introducing port 6 and the polygonal cylinder 7 is turned when forming the thin-film. Accordingly, the source can uniformly be supplied to the wafers W.
申请公布号 JPS57192022(A) 申请公布日期 1982.11.26
申请号 JP19810076525 申请日期 1981.05.22
申请人 HITACHI SEISAKUSHO KK 发明人 TAKEDA TOSHIFUMI;YOSHIMI TAKEO;SAKAI HIDEO
分类号 H01L21/205;C30B25/14;H01L21/285;H01L21/31 主分类号 H01L21/205
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