| 摘要 |
<p>An alterable threshold memory device (100) includes a semiconductor substrate (11), a memory silicon oxide layer (12) having a thickness lying in the range of 25-40 Angstroms, a silicon nitride layer (13), an interfacial silicon oxide layer (14) having a thickness lying in the range of 30-60 Angstroms, and a polysilicon gate electrode. The device (100) has a high write speed and a large memory window. The nitride layer (13) may have a thickness lying in the range 150-250 Angstroms, enabling the utilization of low write voltages.</p> |
