| 摘要 |
PURPOSE:To enable the amount of ions implanted to be much more accurately measured by improving a Faraday tube which is used for the ion implantation part of an ion implanting device. CONSTITUTION:The vacuum between a Faraday tube 20 and a bellows 9, which are provided in the ion implantation part of an ion implanting device, is achieved not only by vacuuming through the space formed between a base 6 and the end of the Faraday tube 20, but also by vacuuming through penetrating holes 21 provided in the wall of the faraday tube 20. As the result, in carrying out ion implantation by a wafer-matic end-station method, both the defective insulation and the deterioration of the vacuum between the bellows 9 and the Faraday tube 20, which develop for the index of each wafer, can be suppressed within a small range. Consequently, the negative leak of the measured value of a current integrator 13 is improved, and the amount of ions implanted can be measured much more accurately. |
