Pressure sensor

摘要

The invention relates to a pressure sensor consisting of a diaphragm (1) in which a resistance structure (2) is introduced. The pn junction (7) between the resistance structure (2) and the diaphragm (1) is protected by an additional semi-insulating layer (11) which prevents the formation of a channel at the pn junction (7) by ion migration in or via a passivation layer (10). <IMAGE>