| 摘要 |
PURPOSE:To obtain easily manufacturable ion sensor while making insulation complete, by providing mutually independent semiconductor silicon layers ona sapphire insulating substrate. CONSTITUTION:At one end of a sapphire substrate 1 in a thin and long plane shape, a semiconductor silicon layer 2 is provided and an ion sensitvie film 9 is stuck on said layer 2, thus forming a semiconductor field effect type ion sensor. In this structure, the reverse surface of the layer 2 is insulated already and the top surface of this silicon layer is etched into an island to insulate and separate the ion sensor. Since this etching hardly extends laterally, a wafer is utilized effectively and plural ion sensor differing is kind are formed on the same sapphire to realize a multisensor. |
