| 摘要 |
Provision for a source of phosphorus dopant on a silicon wafer, for the subsequent formation of an electrical p-n junction, by the vapor deposition, at atmospheric pressure, of phosphoric acid to form an essentially continuous film on a silicon wafer, said wafer being at room temperature, and the firing of said film to form a phosphorus oxide-silicate-glass layer which will not interfere with any antireflective layer deposited thereon.
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