| 摘要 |
PURPOSE:To obtain conveniently a bipolar semiconductor device of integrated injection logic (I<2>L), etc., by a method wherein an n<+> type layer is piled up on an n type layer having a p<-> type buried layer, perpendicularly etched grooves are formed reaching the buried layer making a polycrystalline Si layer having the oxidized surface as the mask, SiO2 films are formed selectively on the groove bottoms, and electrodes to come in contact with the p<-> type layer through the sides are equipped. CONSTITUTION:SiO2 films 106, 107 are provided selectively on the n type Si epitaxial layer 103 having the p<-> type buried base layer 105, the n<+> type polycrystalline Si layer 108, an SiO2 film 109 are piled up, and etching is performed to expose the n type layer 103 applying an Si3N4 mask 110. The SiO2 film 109, an n<+> type layer 112 extended from the layer 108 are provided on the sides of the layer 108, and etching 115 is performed perpendicularly penentrating the layer 105. The sides are covered with Si3N4 masks 116', and SiO2 films 117 are formed on the groove bottoms. The masks 116' are removed, B ions are diffused in the sides of the protruding bodies to form p type layers 119, and the electrodes 121, 122 are equipped. By this constitution, the oxide films 117 can be formed by self alignment in the collector layers without restricted by deterioration of crystallinity of the epitaxial layer and depth of the base layer of the vertical type npn element, etc., a parasitic p-n junction is not generated, and the bipolar device of I<2>L, etc., can be formed conveniently. |
