| 摘要 |
PURPOSE:To obtain the element with the least noise by a method wherein the InGaAs layer, In GaAsP layer, IN GaAsP layer, In P layer with the same N type and the different energy gap and carrier concentration are laminated on the N type InP substrate to be liquidus epitaxially grown and P type region is provided on the uppermost layer. CONSTITUTION:An N type InGaAs layer 22 with energy gap of 0.75eV, light wave length sensitivity of 1.0-1.7mum and concentration of 5X10<15>/cm<2>, the N type InGaAsP layer 23 with energy gap of 0.92eV and concentration of 5X10<15>/ cm<2> and the N type InGaAsP layer 24 with energy gap of 1.0-1.1 eV and concentration of 1X10<16>/cm<2> are laminated on the N type InP substrate 21 with carrier concentration of 10<18>/cm<2> to be liquidus epitaxially grown. Then the N type InP layer 25 with concentration of 5X10<15>/cm<2> is further grown on said layer 24 and Cd atoms are diffused on said layer 25 to provide the P type region 26 generating the P-N junction on the interface with said layer 24. Through these procedures, the location of the P-N junction need not be precisely controlled. |
