| 摘要 |
<p>PURPOSE:To prevent disconnections of a pad region of a micro wiring layer and damages of insulating layers immediately thereunder when wire junction, by superimposing a reinforcement layer with required thickness on the junction pad region of the wiring layer. CONSTITUTION:The insulating layers 6, 7 on a P type Si substrate 1 are opened windows 8 through to N<+> source, drain 3 to provide the wiring 9 via the window 8. A preventing film 10 is superimposed to open a window 11 on a required region through to the junction pad region of the wiring 9 to form the thick reinforcement layer 12 of conductive material. The thickness is determined appropriately with the film thickness of the wiring 9 immediately thereunder and the specification or integration of the element on the Si substrate 1. In this constitution, disconnections are not produced on the wiring 9 immediately under a junction wire connected via the reinforcement layer 12 further for no defects on the insulating layer 7 so that the occurrence of leakage current is controlled with remarkable improvement of reliability.</p> |
