| 摘要 |
PURPOSE:To prevent the deterioration of eye-pattern by reducing the transition vibration and to improve the high-speed digital characteristics for the titled semiconductor laser by a method wherein the semiconductor laser is formed into Y-shaped mesa stripe form, and the impurity density of that region is controlled. CONSTITUTION:On an N type GaAs substrate 1, an N type Al0.3Ga0.7As clad layer 2, and N type Al0.15Ga0.85As photo waveguide passage layer 3, a P type GaAs active layer 4, and a P type Al0.3Ga0.7As clad layer 5 are epitaxially grown in liquid phase and laminated, and etching is performed using an SiO2 film as a mask, and the photo waveguide layer 3 is exposed by locally removing the layers 4 and 5. Then, mesa etching is performed as deep as to the substrate, a Y-shaped mesa stripe, whereon the layer 3 will be laminated at the front end and the layers 2-5 will be laminated at the rear end, and the above is surrounded by an N type Al0.3Ga0.7As layer 6. Subsequently, Zn is diffused on the layers 3 and 5 using an SiO2 film, having an oblong-shaped window, as a mask, the density of P type impurities of the layer 5 is adjusted, and at the same time, a part of the surface of the layer 3 is selectively changed to P type. |
