| 摘要 |
A method is provided in which information may be written at ultrahigh speed onto a memory material, limited only by the pulse time of a laser beam employed. A semiconductor memory material capable of changing from the crystalline to the amorphous state, each state being stable at ambient conditions, is utilized. Information may be written and stored by exposing discrete portions of the semiconductor material to a high speed pulsed laser wherein said exposed portions are converted from the crystalline to the amorphous state. |
