| 摘要 |
PURPOSE:To decrease load capacitance, to improve the characteristics of the device and to ameliorate the degree of integration by directly connecting each wiring layer to the source, drain and gate regions of an MOS type transistor. CONSTITUTION:A field oxide film 12 is formed onto a semiconductor substrate 11, and the MOS type transistor consisting of the source and the drain 20, a gate oxide film and a polysilicon gate is shaped onto an element forming region. Polysilicon having high impurity concentration is formed to the extracting sections of the source and the drain 20 in the same manner as the gate section, and platinum silicide layers 22 are shaped to the surfaces. Sections among these layers are buried by oxide films 21, and flattened. The first layer metallic film 23 is molded, an insulating film 24 is grown, a desired contact hole 25 is formed, and the second layer metallic film 26 is directly connected to the silicide layer 22 without through the first layer metallic film. Accordingly, the metallic films of each layer mutually become independent, and can be contacted from the same surface. |
