| 摘要 |
PURPOSE:To construct each electrode by a method wherein a metal layer, a first resist film and an oxide film are deposited on a substrate having a semiconductor region, and a with a second resist film employed as a mask, side-etching is performed in order to expose the semiconductor region, on which each of electrodes is formed by employing the first resist film as a mask. CONSTITUTION:On a semi-insulative substrate 30, an N type GaAs active layer 31 is epitaxially grown. An Al layer 32, a first photoresist 33 and an SiO2 film 35 are deposited thereon and then successively etched by employing a second resist 36 as a mask. The first resist is side-etched to expose the active layer 31. An AuGe alloy 37 and TiPtAu 38 are deposited obliquely and from the directly upper side, respectively, by means of evaporation of form a gate electrode 381. The resist 33 is removed by etching to form source and drain electrodes 39, 40. Thereby, the source, drain and gate electrodes can be formed by employing only a single maks, and it becomes unnecessary to align masks. |
