| 摘要 |
PURPOSE:To form a recess-type micro-multilayer gate electrode of a GaAs FET excellent in characteristics, by a method wherein an end of a multilayer gate electrode is formed at a part of an insulator in a recess, and the multilayer part is successively removed so that only a gate electrode is left. CONSTITUTION:On a GaAs semiconductor substrate 10, a first Al layer 20 and a second SiO2 layer to be a mask are provided. A minute opening 41 and an opening 31 larger than the former are formed therein. A part of the semiconductor surface is removed to form a recess 11. An insulator is selectively formed with a given angle on the surface and a part of the recess by employing the second layer as a mask. After metal layers, such as Mo 60, Ti 70 and Au 80, are sucessively deposited as gate electrode metals, these metals and the mask are removed so that the end of the gate electrode metals forms on the recessed semiconductor substrate a multilayer gate electrode formed on a part of the insulator. |
