| 摘要 |
<p>PROBLEM TO BE SOLVED: To make productivity of a semiconductor device of a structure satisfac tory, wherein a stress applied to external electrodes can be relaxed, and the yield of the device, by a method wherein a semiconductor chip is superposed on a substrate, a through-hole is formed at a prescribed position on the sub strate, and a conductor consisting of a plating is formed in the through-hole. SOLUTION: The width between the bonded surface of a semiconductor chip 1 to a bonding agent 13 and a printed board 110 is about 350 to 650μm, the thickness between the bonded surface of the chip 1 to the bonding agent 13 and a solder resist 17 is about 50 to 350μm, and the thickness between the resist 17 and the board 110 is about 300μm. Of these widths and thicknesses, since most of the width between the bonded surface of the chip 1 to the bonding agent 13 and the resist 17 is occupied by a substrate 12, the thickness between the bonded surface of the chip 1 to the bonding agent 13 and the resist 17 can be considered roughly equal to that of the substrate 12. From the above, since the generation of a breakage and a cleavage in the connection part of the substrate 12 with the chip 1 can be prevented, the productivity of a semiconductor device can be improved.</p> |
