| 摘要 |
PURPOSE:To improve dielectric breakdown stregnth by a method wherein one end of the second belt-shaped region surrounding an emitter region in a base region is connected to the emitter region and the other end is extended along the external circumference of the first belt-shaped region connected to the base region. CONSTITUTION:A P type base region 2 is formed on N type Si substrate 1 and an N type emitter region 3 in the base region 2. A narrow N type belt-shaped resistance region 5 connecting one end of the region 5 to the emitter region 3 exists. An annular region 4 surrounding the emitter region 3 and acting as a floating emitter further extends along the external circumference of a belt- shaped resistance region 5 from the external circumference of the region 3. In this way, breakdown tolerance is improved. |
