| 摘要 |
PURPOSE:To prevent the existence of metals, to reduce contact resistance and to improve direct contact by forming a normal wiring section by metal-polycrystal silicon and forming a direct contact section with the base body side only by polycrystal silicon. CONSTITUTION:An insulating layer 2 and a gate insulating film 3 are formed onto a semiconductor substrate 1, and gate electrodes and wiring consisting of polycrystal 5a, 5b, 5c and Mo films 7a, 7b, 7c are shaped. An impurity is injected by ion beams 8, the Mo film 7b of the direct contact region is removed, source and drain regions 10, 11 are formed through impurity diffusion, and a PSG film 12 and Al electrode wiring 15, 16, 17 are shaped. The increase of contact resistance generated among the Mo layers and the polycrystal Si layers is avoided because the direct contact section with the base body side has no Mo layer and consists of only the polycrystal Si layers. |
