发明名称 CONTINUOUS VACUUM DEPOSITION DEVICE
摘要 PURPOSE:To reduce a vapor deposition time and electric power by disposing a preheating chamber, a vapor deposition chamber and a cooling chamber which are separated by gate values in vertical directions and making the transfer of substrates by gravity possible. CONSTITUTION:A gate valve 2 between a preheating chamber 2 and a vapor depositing chamber 8 is opened to allow the heated substrates in the chamber 5 to fall into a net gate 10 in the chamber 8. Upon completion of the vapor deposition of the substrates, a gate valve 3 between the chamber 5 and the chamber 13 is opened to allow the substrates completed of the vapor deposition to fall into a cooling chamber 13 where the substrates are cooled. The vapor deposition time and electric power are reduced by the above-mentioned device.
申请公布号 JPS57188678(A) 申请公布日期 1982.11.19
申请号 JP19810073051 申请日期 1981.05.14
申请人 MATSUSHITA DENKI SANGYO KK 发明人 FUJITA TAKAYUKI;KURODA YOSHITAKA;HORI KENICHIROU
分类号 C23C14/22;C23C14/54;C23C14/56 主分类号 C23C14/22
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