发明名称 |
CONTINUOUS VACUUM DEPOSITION DEVICE |
摘要 |
PURPOSE:To reduce a vapor deposition time and electric power by disposing a preheating chamber, a vapor deposition chamber and a cooling chamber which are separated by gate values in vertical directions and making the transfer of substrates by gravity possible. CONSTITUTION:A gate valve 2 between a preheating chamber 2 and a vapor depositing chamber 8 is opened to allow the heated substrates in the chamber 5 to fall into a net gate 10 in the chamber 8. Upon completion of the vapor deposition of the substrates, a gate valve 3 between the chamber 5 and the chamber 13 is opened to allow the substrates completed of the vapor deposition to fall into a cooling chamber 13 where the substrates are cooled. The vapor deposition time and electric power are reduced by the above-mentioned device. |
申请公布号 |
JPS57188678(A) |
申请公布日期 |
1982.11.19 |
申请号 |
JP19810073051 |
申请日期 |
1981.05.14 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
FUJITA TAKAYUKI;KURODA YOSHITAKA;HORI KENICHIROU |
分类号 |
C23C14/22;C23C14/54;C23C14/56 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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