| 摘要 |
PURPOSE:To increase the integration degree and the speed of a semiconductor device, by providing a high-electron mobility transistor (HEMT) having, on a substrate, a channel layer, an electron supply layer for generating an electron charge layer, a pair of electrodes formed on the electron supply layer sandwiching a control electrode, and a third electrode to be connected to the electron charge layer. CONSTITUTION:On a substrate 1, a channel layer 2 constituted by a non-doped GaAs single crystal layer is formed, together with an electron supply layer 3 made of N type AlGaAs. An electron charge layer 4 is generated in the channel layer 2 near the hetero interface. On the regions for forming drain and source electrode 5, 6 of this enhancement type transistor and a pair of electrodes 6, 7 defining two terminals of a load element, an Au-Ge metal layer 8 is deposited by evaporation and alloyed. These electrodes and the electron charge layer 4 are ohmically connected togher. A recess for forming a gate is provided, and a gate electrode 10 is formed thereon. Thereby, a highly integrated, high-speed semiconductor device is obtained through a simple process. |
