| 摘要 |
PURPOSE:To form thin films of a desired homogeneously crystalline state extremely easily by removing electric charge particles in the process for formation of the thin films by a vacuum to allow only the film forming particles to scatter onto a substrate and irradiating controlled electron beams to the substrate. CONSTITUTION:A substrate placed in a vacuum or low pressure gaseous atmosphere is enclosed with, for example, a commonly used meshed shielding system, and a prescribed voltage is applied to the shielding system. Then, at an arbitrary point of time in a series of stages for formation of the thin films, the scattering of various non-restraining electric charge particles suspending in the atmosphere is suppressed or blocked. While only the film component particles are allowed to scatter onto a substrate (a film surface), controlled electron beams are irradiated continuously or intermittently. |
