| 摘要 |
PURPOSE:To form a recess-type micro-multilayer gate electrode of a GaAs FET excellent in characteristics, by a method wherein a first layer and a metal thereon are simultaneously removed so that only a gate electrode is left on a recessed substrate. CONSTITUTION:On a semiconductor substrate 10, a first SiO2 layer 20 and a second layer 30 as a photoresist to be a mask and provided with a minute opening 31 are formed. An opening 21 equal to the opening 31 is formed in the first layer 20 to expose the semiconductor surface, a part of which is removed to form a recess 11. A first metal film of Mo 40 is formed on a part of the recessed semiconductor surface, followed by a second metal film of Pt 50. Then, an insulating film is provided and selectively removed by means of etching in order to form a third metal film of Au 70 on the second metal film 50. The first layer 20 is removed, together with the metal thereon at the same time, so that only a multilayer gate electrode is provided on the recessed semiconductor substrate. |
