| 摘要 |
PURPOSE:To control a sputtering source and an electron beam evaporating source respectively independently and to increase the speed of thin film formation in a device of making combination use of said evaporating source and sputtering source by locating the evaporating source behind the through-hole of a target plate facing a substrate. CONSTITUTION:A vacuum forming device 2 and a gas supplying and regulating device 3 are operated to keep a prescribed gaseous pressure in a vacuum vessel 1. A voltage is applied between a substrate 4 and a target plate 6 having a through-hole 9, and an electric discharging area 11 is formed between the plates 4 and 6. The gaseous ions in the area 11 sputter the surface of the plate 6, and the material of the sputtered surface of the plate 6 is stuck on the surface of the substrate 4. When an electron beam is irradiated to the evaporating material 12 contained in an evaporating source 10, the material 12 scatters radially, and advances into the area 11 by passing mainly through the hole 9 of the plate 6 in front of the source 10 in an arrow A range, and deposits on the substrate 4. Since the material 12 passes through the area 11, various phenomena such as excitation, ionication and the like affected by the area 11 are induced in the evaporating material and therefore, the thin film of the structure and properties differing from those in the case of pure vapor deposition are formed. |
