| 摘要 |
PURPOSE:To prevent etchant from soaking at the time of wet etching for pattern formation, by placing a photoresist layer of good tightness to both between a patterning film and an electron beam resist layer, and by making the resist layer double layer structure. CONSTITUTION:A patterning layer 2 is formed on a semiconductor substrate 1. A photoresist layer 3 is formed thereupon. An electron beam resist layer 4 is formed on the photoresist layer 3. Next, a desirable pattern is formed on the electron beam resist layer 4, by developing the electron beam resist layer 4 after electron beam irradiation. The desirable pattern is transferred to the photoresist layer 3. Afterwards, the desirable pattern is formed on the semiconductor substrate due to the patterns formed on the electron beam resist layer 4 and photoresist layer 3. |
