| 摘要 |
PURPOSE:To improve light emission efficiency by piling an alloy layer of Be or Zn whose main component is Au, a Ta layer which contains 0.5-2.0 atom% of O and a metal layer composed of Au or Al successively on a p layer electrode Which composes P-N junction. CONSTITUTION:An electrode 34 composed of, for instance, Au-Ge alloy layer is formed on the side of an N type GaP layer 31. Then an electrode 35, which is composed of an alloy layer 35a which has thickness about 0.05-0.1mum and contains 1wt% of Zn, a Ta layer 39 which has thickness about 0.2-0.4mum and contains 1atom% of O and an Au layer 35b which has thickness about 0.2-1mum, is formed o a P type GaP layer 33. The Ta layer 39 is formed by vacuum deposition. In other words, an wafer on which the alloy layer 35a is deposited is put in a deposition equipment and the equipment is exhausted to the rate of vacuum about 10<-7>-10<-8> Torr and then O2 is introduced to the rate of vacuum 10<-7>-10<-8> Torr mark and Ta is deposited under such condition and the Ta layer which contains 1atom% of O is formed. |
