| 摘要 |
PURPOSE:To obtain an insulation separation region of high dimensional accuracy, by forming a vertical recession on a silicon substrate and accumulating an insulator in the recession. CONSTITUTION:A recession 11 is formed on a silicon semiconductor substrate 10. Next, an insulator 12 is accumulated by CVD method. Next, the insulator 12 is etched by anisotropic dry etching. The insulator 12 is left only on the side of recession 11. Next, the same insulator 15 as insulator 12 is accumulated by CVD method. Next, a surface insulator is etched. As a result, the flat-surfaced insulation separation region can be formed without occurrence of bird-beak. |
