| 摘要 |
PURPOSE:To prevent a semiconductor from producing a defect on its surface, by attaching a polysilicon film on a back surface of semiconductor substrate, heat-oxidizing the substrate at high temperatures and forming oxidation-inducing defects of high density on the back surface of substrate. CONSTITUTION:A polysilicon film 2 of SiH4/N2 family is grown at high temperatures on a back surface of Si substrate 1. The substrate is heat-oxidized under wet O2. Oxide films 3, 3' are formed on both surfaces of the substrate thereupon. The etching is done in diluted etchant, after removing the oxide films 3, 3' with lactic aicd. Consequently, oxidation-inducing defects produced on the back surface of substrate absorb a nucleus of surface defect due to polysilicon reaction. |
