VERFAHREN UND VORRICHTUNG ZUM HERSTELLEN VON MONOKRISTALLINEM SILIZIUM

摘要

An apparatus for producing monocrystalline silicon uniformly containing oxygen at a high concentration. The invention provides an apparatus that employs an improvement in the Czochralski method for producing monocrystalline silicon. The apparatus includes an annular shaped member which floats on the surface of the silicon melt and prevents the escape of oxygen from the silicon melt. The member rotates around a pull of monocrystalline silicon which is pulled through the aperture of the member. The member preferably is made of quartz which supplies oxygen to the silicon melt and thereby increases the concentration of oxygen in the melt.