| 摘要 |
PURPOSE:To obtain a fine crystalline amorphous silicon film without raising the applied voltage for generating a plasma by a method wherein reactive gas containing SiH4 of plasma CVD is diluted by H2. CONSTITUTION:An upper and lower electrodes 2, 3 are arranged oppositely within a reactive tank 1 of plasma CVD equipment and the reactive gas is introduced from an air supply tube 5 to the tank 1 while providing a vacuum exhaust for the reactive tank 1 through the exhaust tube 4. The air supply tube 5 is provided with a mobosilane bomb 6, phosphine bomb 7 and hydrogen bomb 8, connected thereto and the mixing gas of SiH4, PH3, PH3 and H2 is introduced into the interior of the reactive tank 1 by opening valves 9, 10 and 11. A substrate is mounted on the lower electrode 3 and a high frequency voltage of 13.56MHz from the power supply is applied across the upper and lower electrode 2 and 3 while providing a heating by a heater 12. |
