METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to make a uniform density between a tungsten silicide layer and the phosphorus-doped polysilicon layer by implanting a phosphorus in the tungsten silicide layer, to prevents a phosphorus diffusion, and effectively restrict a gate deflection. CONSTITUTION: A gate oxide layer(20) and a doped polysilicon layer(30) are sequentially deposited on a semiconductor substrate(10). A tungsten-silicide layer(40) and a capping-poly layer(50) are deposited on the doped polysilicon layer. Ion implantation process is made on a total surface of the capping poly layer, and thus an ion is implanted in the tungsten silicide layer. In addition, a driving force occurring a phosphorus diffusion is removed, and thus a phosphorus diffusion is prevented.