| 摘要 |
PURPOSE:To shorten an accumulation time caused by the accumulated charge, and to execute the switching operation at a high speed, by short-circuiting and annihilating the charge between the base and the emitter of a bipolar transistor, when the switching element is shifted to an off-state from an on-state. CONSTITUTION:A switching element is constituted of an n type MOSFET1, p type junction FET2 and a bipolar transistor TR3, the source S of the FET1 is connected to the drain D of the FET2, and its junction point is connected to the base B of the TR3. Also, the drain D of the FET1 and the source of the FET2 are connected to the collector C of the TR3 and the emitter E of the TR3, respectively. Conduction and nonconduction between the collector C and the emitter E of this TR3 are controlled by an input of each gate electrode 4 of the FETs 1, 2. In this way, when the switching element is shifted to off from on, the charge between the base B and the emitter E of the TR3 is short-circuited and annihilated, and the switching operation is executed at a high speed. |
