| 摘要 |
<p>A semiconductor device having current suppressing layers (541, 542,...,) for suppressing the current which flows in the lateral direction between adjacent element units. Each element unit has a semiconductor substrate (40, 42) of at least one layered structure, a base layer (44) of a first conductivity type which is formed on the semiconductor substrate (40, 42), and a plurality of emitter layers (461, 462,...,) which are formed on the surface of the base layer 44. The current suppressing layers (461, 462,...,) are formed in the regions of the base layer (44) which are between adjacent emitter layers (461, 462,...,).</p> |
