发明名称 |
THYRISTOR TYPE SEMICONDUCTOR DEVICE |
摘要 |
<p>11 48,753 The present invention is directed to a five region thyristor type semiconductor device which functions electrically as a bi-polar transistor and a field effect transistor.</p> |
申请公布号 |
CA1135875(A) |
申请公布日期 |
1982.11.16 |
申请号 |
CA19800347701 |
申请日期 |
1980.03.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YUKIMOTO, YOSHINORI |
分类号 |
H01L29/80;H01L29/10;H01L29/74;H01L29/744;H01L29/76;H01L29/772;(IPC1-7):H01L29/42;01L29/74 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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