发明名称 PYROELECTRIC INFARED-RAY DETECTOR
摘要 PURPOSE:To raise adhesion of a photodetecting electrode and to obtain a device having less change of properties and high reliability, by disposing a protective coating film such as a thin organic coating film or the like on a surface of a pyroelectric material, at least on the electrode. CONSTITUTION:In a receptacle which keeps a constant atomosphere and supports window materials, a photodetecting electrode made of a thin metallic coating film and a pyroelectric material which is provided with the counter electrode and adhered a protective coating film such as a thin organic film or the like at least on the photodetecting electrode, are housed. A nickel-chromium film is formed on all the surface of a rear side of the pyroelectric material 6 consisting of e.g. LTa3 Z-cut wafer to obtain the counter electrode 7. Then, a hollow silicon supporting base 8 is adhered to the material 6 with a conductive adhesive. As a photodetecting electrode 10 on a photodetecting surface on a surface of the material 6, e.g. a nickel-chromium film is selected and vapor-deposited, and Al for wiring 11 is selected and vapor-deposited adjacently to the electrode 10. After applying e.g. a resist as a protective film 12 to all the surface, Al for wiring 11 is exposed by photoetching and the wafer is divided into chips after a photodetecting part is arranged to be protective.
申请公布号 JPS57186130(A) 申请公布日期 1982.11.16
申请号 JP19810070688 申请日期 1981.05.13
申请人 TOKYO SHIBAURA DENKI KK 发明人 FUKUDA KATSUYOSHI;MATSUMURA SADAO
分类号 G01J5/02;G01J5/34;H01L37/02 主分类号 G01J5/02
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