| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with guard rings which can effectively shut out external noise. SOLUTION: In a semiconductor substrate 11, a first guard ring 13a formed by means of high-density ion diffusion is provided around a transistor formation region 12, and a second guard ring 13b is provided at a prescribed distance from the first ring. Metal films 16a, 16b are so formed as to face the guard rings 13a, 13b with an insulation film 15 interposed between the metal films and the guard rings. The metal films 16a, 16b and the guard rings 13a, 13b are connected by interlayer connections 17a, 17b, respectively. The metal films 16a, 16b are connected from electrodes 14a, 14b via individual metal wires 23a, 23b to an outside terminal 22 applied with a reference voltage COM. Thus, noise voltage applied to, for example, an electrode 14n, from the outside can be shut out effectively, eliminating the influence on transistors, etc., in the transistor forming region 12. |
