| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device of a chip size package structure, in which sealing resin is formed on both faces of a semiconductor element, and in particular a method for manufacturing a thin semiconductor device, in which the thickness of the semiconductor element is 200 μm or less. SOLUTION: In the method for manufacturing a semiconductor device, after first resin is formed on a front surface of a semiconductor wafer and second resin is formed on a rear surface thereof, and when the thickness of the first resin is A and the thickness of the second resin is B, a step of polishing the second resin is provided so as to satisfy 0.2<=B/A<=1. |
