| 摘要 |
PURPOSE:To detect the temperature change of a laser diode element with high sensitivity by forming a P type or N type diffusion resistor and a wiring pattern for outside extraction to one part of a sub-substrate on which the laser diode element is fixed. CONSTITUTION:An N type or P type diffusion resistor 11 is shaped at a position in the vicinity of the laser diode element 1 on the surface of the Si sub-substrate 2 on which the element 1 is fixed, and the wiring pattern 12 for outside extraction is formed from the both ends. A bonding pad 13 is attached to the nose of the pattern 12, connected to an electrode terminal 5 by a wire 6 from the nose and connected to a Peltier element temperature regulating circuit. Accordingly, the temperature change of the element can be grasped with high sensitivity by utilizing the temperature change of the resistance value of the resistor 11, and stable laser oscillation can be ensured. |
