| 摘要 |
PURPOSE:To obtain a fine pattern by laminating a metallic Cr film and an oxidized Cr film containing an impurity such as W on a glass substrate, and selectively emitting radiation on a resist film covering the Cr films to plasma develop the resist film as a mask, thereby drying all processes. CONSTITUTION:A metallic Cr film 11 and an oxidized Cr film 12 containing an impurity such as W or the like are laminated on a glass substrate 10, an electron beam exposure resist film 13 is coated on the films, and is baked at 170 deg.C for 20min. Then, an electron beam 16 is selectively emitted to the film 13, is developed in an wet air plasma, thereby forming a pattern 14 of the prescribed shape. In this manner, the patterning is enabled even when the thickness of the film 13 is thin, with the film as a mask ultraviolet ray, far ultraviolet ray, electron beam, X-ray or ion beam or the like is emitted in the mixture gas of CCl4 and O4, N2, thereby etching it to remove the exposed part of the laminated films, and an inversion layer 15 made of the prescribed thin metallic film can be obtained. |
