| 摘要 |
PURPOSE:To obtain an electrode or wiring having high etching resistant property by forming an acid-proof silicide film in WSi2 or MoSi2 or the like onto Ti or TiSi2. CONSTITUTION:A thick field SiO2 film 2 is shaped to the peripheral section of a P type Si substrate 1, the surface of the substrate 1 surrounded by the film 2 is coated with a thin gate SiO2 film 3, and a polycrystal Si film 4 containing an N type impurity, the TiSi2 film 5 and the WSi2 film 6 are laminated and deposited onto the whole surface. An electrode pattern consisting of these laminates is formed at the central section of the film 3 and a wiring pattern onto the film 2 through photolithographic technique, and an implantation layer 14 is shaped into the substrate 1 positioned at the both sides by using the impurity ions of As, P, etc. while employing the electrode pattern as a mask. The whole surface is coated with a PSG film 7, ions implanted are activated through heat treatment, and N<+> type source and drain regions 8, 9 are formed. Accordingly, the electrode or wiring, which is difficult to be eroded by acids, is obtained. |
