| 摘要 |
PURPOSE:To obtain a resist film pattern having no defect such as a pinhole or the like by moving a substrate at the prescribed distance in the prescribed direction after the exposure and again exposing it when forming a resin film on a semiconductor substrate to be etched, covering the film with a photomask of the predetermined pattern and exposing the resist film. CONSTITUTION:An insulating film 1 to be patterned is covered on a semiconductor substrate, and when an ultraviolet light is emitted onto the substrate, the emitted region is cured, and the unemitted region is coated with a negative type resist film 2 to be removable by developing. Subsequently, a photomask 3 having a light transmission region 3a and an opaque region 3b is placed on the film, an ultraviolet light 4 is exposed from above, the film 2 directly under the region 3a is crosslinked and cured, and the film 2 under the region 3b is set in the state capable of being developed. If an exposure disturbing substance 5 such as dusts or the like is adhered onto the region 3a at this time, the film 2 under the substance becomes the same state as the film 2 under the region 3b. Accordingly, the substrate 1 is moved after the first exposure, and is again exposed at the region under the substance 5. |
