| 摘要 |
PURPOSE:To enable removal of a positive type photoresist in a short time without contaminating an IC by first operating a strong acidic solution to the resist and then operating an organic solvent such as acetone or the like when removing the resist after the primary film is plasma etched with the resist as a mask. CONSTITUTION:An SiO2 film 2 is grown by a vapor phase growing method on the surface of an Si substrate 1, a positive type photoresist film 3 is coated on the film, is exposed and developed, and is baked at 150 deg.C for longer than 30min as the prescribed pattern. Subsequently, with the film 3 as a mask the exposed surface of the film 2 is removed with C3F4 gas by a plasma etching unit having a parallel flat plate type electrode structure. Thereafter, to remove the film 3, the substrate 1 is immersed in a smoking nitric acid which is retained at the room temperature for approx. 1min, thereby varying the quality of the film 3 and roughing the surface, the surface is washed with water, and is dipped in 99%-acetone solution. In this manner, unnecessary resist can be removed in a short time, and the element is not contaminated. |
