| 摘要 |
PURPOSE:To be adapted for the formation of a drawing electrode of a low resistance by forming by etching a groove on the surface of a semiconductor substrate, burying the groove with a polycrystalline semiconductor layer, introducing a conductive type deciding impurity to the groove, thereby facilitating the formation of a diffused layer having a narrow width and a high depth. CONSTITUTION:A dielectric film 12 is covered on the surface of a P-type Si substrate 11, a window is opened by photoetching, and a hole of approx. 0.5mum of width and approx. 2mum of depth is opened by anisotropic etching with ion etching or KOH solution. Then, a polycrystalline Si layer 13 containing an N type impurity such as As, P or the like is accumulated by a CVD method on the overall surface including the hole, or a polycrystalline Si layer 13 containing no impurity is accumulated, and N-type impurity ions are then implanted. In this manner, the layer 13 buried in the hole is used as an electrode contacted with the prescribed region under the layer 13, and the layer 13 on the film 12 connected to th electrode is used as a drawing electrode. |
