METHOD OF DISPERSING METAL OXIDE SLURRY FOR SEMICONDUCTOR CMP PROCESS

摘要

PURPOSE: A method for dispersing a metal oxide slurry for semiconductor CMP(Chemical Mechanical Polishing) process is provided to obtain the slurry with the fine and uniform particles by colliding the metal oxide slurry on a wall face of an orifice of a dispersion chamber. CONSTITUTION: A metal oxide is mixed with water within a pre-mixing tank(1) in order to form a metal oxide slurry. The metal oxide slurry is transferred to a line connected with a high-pressure pump(3) by a transferring pump(2). The metal oxide slurry is compressed and accelerated by using the high-pressure pump(3). The accelerated slurry is injected into an orifice of a dispersion chamber(4). A check valve(5) is installed at a front side and a rear side of the high-pressure pump(3) in order to prevent the backflow of the metal oxide slurry. The metal oxide slurry is collided on an inner wall face of the orifice.