| 摘要 |
PURPOSE:To enhance ion etching characteristics, by using a glycidyl methacrylate-styrene copolymer cotaining 30-50mol% styrene as a negative resist for forming micropatterns. CONSTITUTION:A resist for forming micropatterns is prepared by using a glycidyl methacrylate-styrene copolymer containing 30-50mol% styrene and having 5-15X10<4>wt. average mol. wt. This resist is exposed to ionized radiation, and the unexposed parts are dissolved off using a developer of acetate and ethyelene glycol monoalkyl ether and a rinse of ethylene glycol monoalkyl ether to form a pattern, thus permitting moisture to be reduced, and meandering of the pattern and scumming, etc. to be prevented. |
